Monolayer HfS₃: A Potential Candidate for Low-Power and High-Performance Field-Effect Transistors

The two-dimensional (2-D) materials hold promise for the ultra-scaled future logic devices. Major semiconductor companies are actively dedicating substantial resources to advancing and commercializing devices based on 2-D materials. Here, a multi-scale simulation method, combining the first principle methods for electronic structure with a nanoscale device simulator, is used to investigate the performance of field-effect transistors (FETs) based on monolayer HfS
3
, a transition-metal trichalcogenide. The monolayer HfS
3
-based FETs demonstrate noteworthy ON current and subthreshold slope (SS) values while exhibiting scalability down to approximately 5 nm. These characteristics hold promise as potential candidates for future low-power (LP) and high-performance (HP) logic device applications.