New Steep Subthreshold Slope Device “Gate-Controlled Carrier-Injection SOI-Transistor”

In this study, we show the first report of the detailed device characteristics of a new device, named “gate-controlled carrier-injection silicon-on-insulator transistor (GCCI SOI-Tr).” It shows an ideal steep subthreshold slope (SS) from the low leakage current level $(\lt 1 \mathrm{pA}/\mu \mathrm{m})$ and the SS of 14 $\mu \mathrm{V}$/dec over 6 decades of the drain current. It also has amplification ability for neuromorphic applications.