Reduction of contact resistance to PVD-MoS₂ film using aluminum–scandium alloy (AISc) edge contact

The contact resistance was reduced by aluminum-scandium alloy (AlSc) edge contact for the MoS
2
film deposited by sputtering. Moreover, after annealing in a forming gas atmosphere, the contact resistance further decreased with an increase in the annealing temperature. These results contributed to a technology of p/n stacked 2D-CFET devices using MoS
2
film.