Investigation of Robust Reliability Performance for 1.2kV 4H-SiC Trench MOSFET with deep P structure

The primary goal of this paper is to assess the reliability performance of a 1200 V 4H-SiC trench MOSFET, incorporating a deep P structure to effectively shield the trench bottom oxide. The main objective is to enhance the device’s capacity to withstand high-current pulses without experiencing failures. Additionally, improvements have been implemented in the gate oxide process to ensure reliable gate oxide integrity, with a specified breakdown voltage and charge to breakdown (QBD). The investigation also utilized the linear E-model to predict the intrinsic time-dependent dielectric breakdown lifetime. Furthermore, a breakdown voltage stability test was carried out by package and wafer level to compare the device’s reliability.