Investigation of Resistive Switching in Ink-Jet Printed Zinc Doped Indium Oxide-Based Devices

Printed electronics is rapidly maturing to address wide application domains including smart sensors, displays, wearables, and bio-medical patches. A printed storage unit can enable the fabrication of complex printed circuits, such as RFIDs. In this study, we investigate the resistive switching in ink-jet printed ITO/a-IZO/Ag two terminal device. Here, we find that alongside space charge limited conduction (SCLC), the oxygen vacancy assisted trap states at the a-IZO/Ag interface controls the switching behaviour of the printed devices. The devices exhibit the 2 order of magnitude difference between the high and low conduction states. Furthermore, we demonstrate 9 cycles of bipolar switching at less than 2 V and retention of the high resistance state (HRS) and low resistance state (LRS) at 50 mV for 1000 s.