TCAD Investigation of AlGaN/AlN/GaN HEMT for Hydrogen Sensing Applications

AlGaN/GaN HEMT-based sensors are capable of withstanding a very high temperature and provide stable performance even in extreme environments. Through this work, it presents the simulation study of the sensing performance of AlGaN/AlN/GaN HEMT-based hydrogen sensor. The simulations are performed using SILVACO TCAD at different temperatures ranging from 300K to 700K. The thermal analysis shows that the device is capable of giving good sensitivity in extreme temperature conditions. The impact of the AlN inter layer in the epitaxial layer has also been studied and it is observed that the AlN layer provides significant improvement in its performance.