A GaN Low Noise Amplifier Design Using Numerical Optimization

In this article, we present the design and implementation of a low noise amplifier (LNA) using $0.5 \mu \mathrm{m}$ GaN HEMT in 2.5 to 2.7 GHz frequency band. We use an impedance line segmentation algorithm (ILSA) to design the matching networks by numerical optimization. The measured maximum gain, minimum noise figure, and average $\mathrm{OP}_{1dB}$ of the designed LNA are 13.8 dB, 0.8 dB and 21.2 dBm while dissipating only 0.72 W of DC power.