A Comparison of Board-Level Lot Acceptance Testing Method With Worst Case Analysis Results

A methodology for radiation lot acceptance at the board level is proposed. A worst case analysis of a dc/dc converter board has been performed per two analytical methods and per a Monte Carlo simulation. Six samples of the board have been tested to confront the analysis results with temperature effects (
$- 55~^{\circ }$
C,
$+ 25~^{\circ }$
C, and
$+ 125~^{\circ }$
C), aging effects (1300 h at
$120~^{\circ }$
C), and ionizing dose effects [20, 50, and 105 krad(Si)]. The tested board functions are found to be almost only dependent on the temperature, whereas significant degradation by aging and dose could be expected from the analysis.