A Novel SGT MOSFET Based on Radiation-Hardening Technology and Its Total-Ionizing-Dose Radiation Effects

In this letter, a novel radiation-hardened SGT(N-SGT), with a specialized hardening process, is firstly developed and the radiation degradation model is proposed. N-SGT has more stable
${V}_{\textit {th}}$
and BV after60Co irradiation, with only 0.16 V of
$\vert \Delta {V}_{\textit {th}}\vert $
and 32.5 V of BV at a dose of 100 krad (Si), while it is 1.3 V of
$\vert \Delta {V}_{\textit {th}}\vert $
and 22.5 V of BV for the Conventional-SGT (C-SGT). For N-SGT, lower
${Q}_{\textit {GOX}}$
reduces the effect of channel depletion, which makes the
${V}_{\textit {th}}$
change less. The lower
${Q}_{\textit {IPOX}}$
,
${Q}_{\textit {TROX}}$
and
${Q}_{\textit {IPOX}}$
:
${Q}_{\textit {TROX}}$
(1:3) effectively weaken the charge imbalance and slow down the BV degradation. Additionally, this letter firstly reveals the TID effects on capacitance characteristics, especially the increase of
${C}_{\textit {gd}}$
in C-SGT, indicating that
${Q}_{\textit {IPOX}}$
and
${Q}_{\textit {GOX}}$
caused the enhanced DIBL effect and channel depletion. Fortunately, N-SGT solves these problems well and achieved a good trade-off between BV degradation and channel depletion during TID radiation.