Analytical Modeling and Performance analysis of Copper- Indium-Gallium-Di Selenide-Based (CIGS) Solar Cell by SCAPS-1D

The research mainly focuses on the performance of CIGS-based solar cells is analyzed (Copper-Indium-Gallium-Di Selenide-). To obtain the best performance of the solar cell, various parameters of the cell such as absorber layer, hole density and band-gap were altered. The impacts of the absorber layer thickness, hole density, and band gap and their influence on the open-circuit voltage (OCV) (Voc), short-circuit current density (SCC) (Jsc), Fill Factor (FF), and Efficiency has been analyzed using SCAPS-1D simulation software. At a CIGS thickness of 3500nm and a CIGS band gap of 1.5eV, the optimized model was able to provide an efficiency of 23.61%. The SCC density was 36.09 mA/cm2, and the OCV was 0.7866 V. This efficiency is considerably more comparable to solar cells made of silicon. This efficiency is substantially closer to that of solar cells made of silicon, which have a 25% efficiency. One of the primary difficulties with CIGS-based photovoltaic modules has been addressed in this study, namely how to achieve optimum performance while reducing production costs.