Fabrication of Nano-Scale Features using Non-Dedicated EBL and Capacitively Coupled RIE

Current semiconductor technology requires fabrication at nanoscale performed and the results are analyzed.Electronic and optical components are getting miniaturized day-by-day leading to the requirement of nanoscale fabrication of semiconductors. Ebeam lithography owing to very small wavelength of electron beams, is regularly used for designing nanoscale features on semiconductor wafers. However, optimization of Ebeam dose for the lithography is critical for precise fabrication at such features, as there are several machine and environment dependent process variables. In this work, the dose factor of a non-dedicated Ebeam lithography (Carl Zeiss Sigma 300 FESEM+ Raith Elphy Quantum lithography attachments) has been optimized for nanofabrication using the capacitively coupled reactive ion etching from hind high vacuum. The optimization is performed using different accelerating voltages and their results compared.