Performance Analysis of InSb Source-Based Heterojunctionless Nanowire TFET for Low-Power Application: Design and Simulation

In this article, we explore a novel and promising device, the InSb-source-based heterojunctionless nanowire Tunnel Field Effect Transistor (TFET), aiming to boost the performance of TFET's output characteristics. While conventional TFET designs struggle with low ON currents, in this research, we leverage the advantages of InSb, a material with a small bandgap, high mobility, and low effective mass, to enhance the ON current. In addition, we also holistically utilize the gate-all-around (GAA) and junctionless concepts in our proposed nanowire TFET. This innovative approach provides us with immunity against random dopant fluctuations (RDF). Further, we take advantage of outstanding gate controllability because of the gate all-around (GAA) configuration in our nanowire device. The proposed device exhibits outstanding performance, with a remarkable ON current, low OFF current, high ION/IOFF ratio, reduced subthreshold swing (SS), and excellent gate controllability. These features make our InSb-source-based heterojunctionless nanowire TFET a strong candidate for next-generation low-power electronics.