Wafer-Scale Deep UV Si Photodiodes Based on Ultra-Shallow Junction

In this Letter, we employed atomic layer deposition (ALD) and flash lamp annealing (FLA) to form a wafer-scale ultra-shallow junction (USJ, ~5 nm) in silicon. The deep ultraviolet light is almost completely absorbed in the PN junction depletion region near the surface, resulting in a high collection efficiency of photogenerated carriers. The junction-based photodiode exhibits outstanding performances with internal quantum efficiency reaching ~95% from 200 nm to 400 nm and a linear response to the UV light within a wide range of 0.4–
$10^{{3}}~\mu $
W.