Temperature Dependent Schottky Contact Behavior of Iron (Fe) Doped $\beta$-Ga2O3

This research investigates the temperature dependent conductivity of Fe-doped bulk
$\beta{-}$
Ga203 substrate, aiming for potential applications in high-temperature scenarios and high-power and radio frequency (RF) devices. To compensate unintentional n-type conductivity and excessive free carrier densities in single-crystal substrates, intentional incorporation of Fe, acting as a deep acceptor or electron trap, is employed in
$\beta{-}$
Ga203 crystals. We focused on the behavior of a heavily iron-doped bulk p-Ga203 substrate, featuring a lateral Schottky-ohmic interdigitated finger device, examined at both ambient and elevated temperatures. As the temperature rose, the deep acceptor Fe progressively released trapped electrons, thereby enhancing the conductivity of the lateral Schottky-ohmic interdigitated finger device. This observed phenomenon effectively offsetted the insulating properties inherent in the heavily doped bulk
$\beta$
.Ga203 substrate. The findings contribute to the understanding of Fe-doped
$\beta$
.Ga203 substrates characteristics for high-temperature applications, facilitating the ongoing development of high-power devices.