Mo/Au β-Ga₂O₃ Schottky Barrier Diodes With Low Turn-On Voltage and High On–Off Ratios for Low-Power Consumption Applications

A low work function metal Mo is used as a Schottky metal to fabricate beta-phase gallium oxide (
${\beta } $
-Ga2O3) Schottky barrier diodes (SBDs) with a size of 1 mm2, achieving an ultralow
${V}_{on}$
of 0.47 V while obtaining a high ON– OFF ratio of 109, and a breakdown voltage (BV) slightly lower than the conventional Ni/Au
${\beta } $
-Ga2O3SBDs. The results of temperature-dependent forward current–voltage measurement and temperature-dependent capacitance–voltage measurement indicate that Mo/Au
${\beta } $
-Ga2O3 SBDs have an excellent barrier homogeneity and high thermal stability comparable to conventional Ni/Au
${\beta } $
-Ga2O3 SBDs. The ac–dc half-bridge rectifier circuits are constructed using Mo/Au
${\beta } $
-Ga2O3 SBDs and Ni/Au
${\beta } $
-Ga2O3 SBDs. The measurement results show that Mo/Au
${\beta } $
-Ga2O3 SBDs have a higher diode rectification efficiency than Ni/Au
${\beta } $
-Ga2O3 SBDs from 25 °C to 150 °C, which manifests a tremendous potential of Mo/Au
${\beta } $
-Ga2O3 SBDs in further reducing power consumption.