Single-Event Transient Study of Ga₂O₃ Rectifiers

Single-event effects (SEEs) studies are carried out on gallium oxide (Ga2O3) vertical rectifiers using ultrafast laser pulses. Two-photon absorption (TPA) technique at 350 nm laser wavelength is used to determine how the device transient response changes with deposited charge, bias, and the presence of defects. Pulsed-laser single-event measurements on Ga2O3 devices show that increased reverse bias and growth-related defects lead to enhanced single-event transients (SETs).