A Readout Circuit for a High Performance Two-Dimensional Material Photoelectric Sensor with Non-Uniformity Correction

This paper presents a novel CMOS readout circuit with adjustable responsivity and non-uniformity correction for two-dimensional (2D) material-based field effect tube (FET) photo-detectors. The signal input unit is realized by a Wheatstone bridge-like structure with temperature compensation. The signal processing module realized with a capacitive transimpedance amplifier (CTIA) structure to complete the amplification of the signal, and the final signal is read out by a 14bit single-slope analog-to-digital converter (ADC). The integrated on-chip non-uniformity correction circuit can complete the correction of ±40% range, with a correction accuracy of 0.156%. The readout circuit has been designed in the 0.18um 1P6M CMOS process, and the output noise is 0.28mV.