Temperature-Sensitive Electrical Parameters of SiC MOSFET Power Module and its Application in Junction Temperature Evaluation

The electro-thermal characteristics of silicon carbide power modules are not exactly the same as those of discrete devices. In this paper, the temperature characteristics and junction temperature evaluation methods of SiC MOSFET power modules under different working conditions have been studied. The studied SiC MOSFET module has a built-in NTC thermistor, which is located on the same substrate as the chip. The temperature information based on the thermistor feedback can verify the accuracy of the junction temperature evaluation of the power module. The characteristics of each temperature-sensitive electrical parameter have been studied by double-pulse experiments of the power module at different temperatures. The junction temperature has been calculated by the loss calculation combined with the real measurement switching waveform, and compared with the temperature measured by the thermistor to verify the rationality of the selected junction temperature evaluation parameters.