Simulation of Crack Initiation and Propagation in Solder Layer of IGBT Module under Temperature Shock in 3D Model Based on Phase Field Method

The crack initiation and propagation in the solder layer of 3D IGBT module model under temperature shock test were simulated using the viscoplastic phase field method (PFM). The effects of three positions (corner, edge, and center) of perforating voids in the solder layer on crack initiation and propagation are studied and compared. The crack area and rate of crack growth were also calculated. Results reveal that the crack initiates at the corner of the interface between the chip and solder layer, and extends to the center in arc-shaped, regardless of whether there are perforating voids. The perforating voids at the corner and edge of the solder layer promote the crack propagation slightly in the early stage. However, the voids at the corner have more impact on the crack growth compared to the voids at the edge. Meanwhile, the voids at the center have almost no influence on the crack growth.