Analysis of Complex BGA Transition for Equivalent Circuit Modeling

The complex BGA transition for the interconnect of silicon interposers is analyzed from the perspective of electromagnetic and circuit simulations. Based on the analysis, the methodology for modeling the equivalent circuit of the complex BGA transition with good accuracy is proposed. Also, dominant factors that impact the accuracy of the equivalent circuit model of the complex BGA transition are revealed. With the guidance of the modeling methodology, a case study to optimize the structure of the complex BGA transition for impedance matching is demonstrated.