Low Loss and Low EMI Noise Trench IGBT with Shallow Emitter Trench Controlled p-Type Dummy Region

A novel trench insulated gate bipolar transistor (TIGBT) with a shallow emitter trench controlled P-type dummy region (STCP-TIGBT) is proposed. Compared with the conventional TIGBT with floating P-type dummy region (CFP-TIGBT) and TIGBT with floating P-type dummy region and normally on hole path (HFP-TIGBT), the proposed STCP structure not only speeds up the extraction of excessive holes in the turn-off process but also reduces the Miller plateau charge
$(Q_{\text{gc}})$
. Therefore, both the power loss and electromagnetic interference (EMI) noise are significantly reduced. Simulation results show that the
$Q_{\text{gc}}$
of the proposed device is only 501
$\text{nC}/\text{cm}^{2}$
, which is reduced by 58.5% and 26.4% when compared to the CFP-TIGBT and HFP-TIGBT, respectively. At same on-state voltage drop
$(V_{\text{ceon}})$
of 1.02 V, the turn-off loss
$(E_{\text{off})})$
of the proposed device is 13.49
$\text{mJ}/\text{cm}^{2}$
, which is 64.6% and 67.6% less than those of the CFP-TIGBT and HFP-TIGBT, respectively. Moreover, the reverse recovery
$\mathrm{d}V_{\text{ak}}/\text{dt}$
of the freewheeling diode at same turn-on loss
$(E_{\text{on}})$
of 31.8
$\text{mJ}/\text{cm}^{2}$
for the proposed STCP-TIGBT is only 2.15
$\text{kV}/\mu \mathrm{s}$
, which is reduced by 91.3% and 57.2% when compared to 24.69
$\mathrm{kV}/\mu \mathrm{s}$
and 5.02
$\mathrm{kV}/\mu \mathrm{s}$
for the CFP-TIGBT and HFP-TIGBT, respectively. The reduced
$\mathrm{d}V/\mathrm{d}t$
significantly suppresses the electromagnetic interference noise generated by the proposed device.