A Study of Pulsed-Charging Methods for Floating Gate MOSFETs Designed for Radiation Measurements

In this paper, two pulse-based injection methods are employed for charging/discharging a floating gate transistor, specially designed to work as dosimeter in radiotherapy applications. When constant voltage pulses are applied to the structure, the floating gate can be successfully charged, but the injected charge self-limits the injection current, slowing down the injection process. To overcome that, an adaptive voltage pulse technique is considered, showing a roughly constant injection current and good enough control of the charge in the floating gate.