Carbon Enabled Devices in Digital Era: A Predictive Performance Analysis of CNTFET over Si-NWFET with Conventional Double Gate MOSFET and Single Gate MOSFET

In this study, the electrical properties of MOSFETs, CNTFETs, and Si-NW FETs are carefully examined. The goal of this research is to determine these devices' performance in terms of a number of electrical metrics, particularly threshold voltage, transconductance, and on/ off current ratio. Simulation strategies were used in the work, and conclusions were compared to the existing evidence from experiments. The results obtained reveal that when compared to Si-NW FETs and MOSFETs, CNTFETs have superior transconductance and lower threshold voltage. The elevated on/off current ratio that CNTFETs shows further qualifies them for low-power applications. Si-NW FETs, as opposed to MOSFETs, show better short-channel effects and a smaller subthreshold slope, Which makes them suitable for high-performance applications.