Subharmonically Pumped H-Band Resistive IQ-Mixer with Gate Bias Above Threshold Voltage

In this paper a resistive IQ mixer biased at the gate above its threshold region is presented. This bias point allows due to lower resistance for broadband matching and good conversion gain. The mixer is subharmonically pumped to improve the LO to RF isolation and the LO power generation. TandemX coupler is used for the 90° hybrid a. A conversion gain of -25 dB for up and down conversion was measured. An IF bandwidth of 30 GHz and a RF bandwidth of 60 GHz is achievable while the LO is adjustable over a bandwidth of 30 GHz allow for frequency multiplexing. The mixer is realized in a 35 nm mHEMT InGaAs process.