A 17mW X-Band LNA for Backhaul Applications in 0.13 μm SiGe BiCMOS

This paper presents a low-power X-band single-ended input to differential output, single-stage cascode low-noise amplifier (LNA) in Infineon's Silicon Germanium (SiGe) BiCMOS technology. The circuit operates from a single supply voltage of 1.8 V. At the center frequency of 12 GHz, the amplifier offers a measured gain of 20.9 dB and a noise figure of 2.8 dB including the on-chip input balun. The circuit achieves a linearity of -10.8 dBm input-referred 1 dB compression point at 12 GHz. The chip size including the pads is 0.86 mm
²
.