Monolithic integration of III-V photodiodes and emitters on silicon

Waveguide coupled III-V heterostructure photodetectors are fabricated by template-assisted selective epitaxy. The devices show responsivities up to 0.2 A/W and 3dB frequencies exceeding 50 GHz. The TASE method allows for a seamless integration of III-Vs with Si features and we also demonstrate hybrid III-V/Si photonic crystal emitters.