Sensitivity Enhancement of TMD MOSFET-Based Biosensor by Modeling and Optimization of Back Gate Parameters

In this work, an analytical model is developed for monolayer, dielectric-modulated (DM), double gate (DG), Transition Metal Dichalcogenide (TMD) Field-effect transistor (FET)-based Biosensor including the effect of back gate oxide parameters to assess the sensitivity of the proposed biosensor in a noisy environment. optimization of the device is achieved by modulating the back gate bias and back gate oxide thickness (BOX) to enhance the sensitivity. It has been witnessed that the enhancement in sensitivity to biomolecules of the proposed biosensor is ~ 125% more with back gate oxide thickness of 10nm when compared with sensitivity at back gate oxide thickness of 200nm at a back gate bias of $V_{bg}=-0.5{V}$. The Signal to Noise ratio (SNR) for the proposed biosensor is approximately three orders enhanced when compared to SNR of contemporary state-of-the-art Si-MOSFET-based biosensors.