Infrared Thermal Imaging-Based Power MOSFET Thermal Resistance Test Method Research

Based on the high-precision infrared thermal imaging camera, the calibration effect of black paint coating on the emissivity and temperature measurement results was investigated. We developed a set of device junction temperature test schemes with reduced error, utilizing the Infrascope TM-HST hot spot detection system. Experimental tests were conducted to verify the repeatability of the thermal resistance measurement results obtained from the devised scheme. Based on the structure-function theory, the junction temperature drop curve is obtained by using the determined test scheme, and the integral structure function curve of the device is analyzed to determine the thermal resistance parameters of each structural layer of the device under test. The results demonstrate the practicality and effectiveness of using the structure function method to analyze the thermal resistance parameters of power MOSFETs.