Minature Microwave Inductive Copuled Plasma as a Source of Atomic Oxygen for Plasma Deposition of Thin Films

Plasma deposition of SiO
2
thin films is successfully used as an effective barrier coating against gas permeation. One of the well-established deposition processes is Plasma-Enhanced Chemical Vapor Deposition (PE-CVD) [1]. The good quality of thin film (thikness of few tens of nanometer) criticaly depends on the fluence of atomic oxygen species and the effective control of this process parameter is essential.