Investigation of HCI Effect and BTBT Supported High Ion/Ioff in Split Double-Gate Junctionless FETs

In this work, a n-type Split-Double-Gate Junctionless Field Effect Transistor (SDG-JLFET) has been investigated with the Sentaurus technology computer-aided design (TCAD) tool. The SDG-JFET device has an n-type channel region with constant doping concentration. The channel electrostatics have been controlled using two different gate regions. One of the gates toward the source end is the control gate, whereas the other one is the floating gate with different work function separated by a thin spacer region. This split gate structure suppresses the current during OFF state operation whereas it provides the band-to-band tunneling (BTBT) in the channel region in ON state, thereby improving the drain current. This study shows that the SDG-JLFET offers a better on-off current ratio (I
ON
/I
OFF
) of $0.38 \times 10^{8}$ as compared to DGJLFET I
ON
/I
OFF
of $2.0 \times 10^{6}$. The SDG-JFET performance in terms of the hot carrier effect and the gate leakage current have also been analyzed, and the gate tunneling current was found to be $2.77 \times 10^{-14} \mathrm{~A} / \mu \mathrm{m}$ at constant drain voltage $\left(\mathrm{V}_{\mathrm{DS}}\right)=1 \mathrm{~V}$.