In Situ Single-Event Effects Detection in 22-nm FDSOI Flip-Flops

A novel single-event effects (SEEs) in situ error detection methodology is presented for high-speed radiation-tolerant digital integrated circuits. Two circuit-level error detection flip-flops (EDFFs) are presented and compared. The flip-flops can detect both single-event transients (SETs) and single-event upsets (SEUs) while embedded in a circuit. This in situ detection allows integrated fault detection and system-level correction and provides an integrated mechanism to monitor the devices’ environment. The prototypes were implemented in a 22-nm silicon-on-insulator (SOI) technology and are experimentally verified with two-photon absorption (TPA) laser injection.