Investigation of X-ray Irradiation Impact on CeRAM

CeRAM devices were fabricated and electrically characterized following x-ray irradiation exposure for the purpose of investigating device reliability and operation in harsh environments. CeRAM were subjected to a total ionizing dose (TID) of up to 1 Mrad, which was found to induce resistance switching (RS) of the memory state. TID was determined to have no impact on RS parameters, including both switching voltages and resistance levels.