Restrictive antenna rules limiting PID degradation for MOS transistors with connected MIM-capacitors

The plasma processing steps required for the implementation of the various layers of Metal-Insulator-Metal capacitors in a metal stack can cause severe damage for a directly connected MOS transistor. Such plasma damage requires a thorough characterization and subsequent design rules which restricting the antenna ratio of a Metal-Insulator-Metal capacitor as an antenna. A new set of antenna design rules are proposed on the basis of reliability stress data and results from the literature. Worst case antenna geometries as well as protection methods are presented.