Broadband Photodetection in WSe₂ and Er Doped ZnO(EZO) Heterostructure

This letter reports Al/EZO/WSe2/PEDOT:PSS/ITO structure based broadband photodetector using low-cost solution method. The p-type WSe2layer forms a heterojunction with n-type Erbium doped ZnO(EZO) layer. PEDOT:PSS layer works as a hole transport layer deposited over ITO coated PET substrate. The proposed device displays a high External Quantum Efficiency (EQEs)/Responsivity
$R_{s}$
(A/W) of 500%/1.60,
$2.05 \times 10^{4}$
%/91.20,
$8.1 \times 10 ^{3}$
%/68.50 at 400nm (UV), 550nm (Visible) and 1050nm (NIR) respectively, under-1.5Vbias.