Relationship between Trapping Centers, Charge Pumping, and Leakage Currents in Hot-Carrier-Stressed Si/SiO2/HfO2 Transistors

We identify two distinct atomic-scale defect responses following hot carrier stressing of HfO
2
based metal-oxide-semiconductor field-effect transistors (MOSFETs). Revealed through various electron spin based magnetic resonance techniques, including spin dependent charge pumping (SDCP) and spin dependent tunneling (SDT), we describe in detail the physical and chemical nature of the two defect responses. Depending on the specific MOSFET biasing configuration and the response magnitude of each defect type, we detect magnetic resonance spectra originating from recombination at defect centers located precisely at the silicon/oxide interface, trap assisted tunneling current through defects located in the oxide bulk, or some combination of both. The results are correlated to and quantified by purely electrical based (non-resonant) measurements of MOSFET charge pumping (CP) and gate leakage behavior. Finally, the non-resonant electrical measurements include deconvolution of the two competing (CP and leakage) mechanisms via frequency modulated CP techniques.