Impact of High-K Deposition Process on the Noise Immunity of FeFETs and their Applicability Towards In-Memory-Computing

This article reports the impact of the high-k material deposition process on the low-frequency noise and reliability of hafnium oxide-based (HfO
2
) ferroelectric field-effect transistors (FeFET). A significant influence of the deposition method on the defect densities and, subsequently, on the low-frequency noise of FeFETs was observed. Furthermore, a correlation with the reliability behavior was found, and improved pathways were identified. Finally, the impact of the FeFET’s reliability on in-memory-computing (IMC) applications was simulated.