Current Driven Modeling and SILC Investigation of Oxide Breakdown under Off-state TDDB in 28nm dedicated to RF applications

Off-state gate-oxide breakdown under non-uniform electric field is performed to investigate the impact of Stress-induced leakage current, channel current and lateral electric field in dielectric breakdown mechanism related to RF operations using ultra short channel devices, i.e. 28nm FDSOI MOSFET. Oxide breakdown is characterized under DC stress with different gate-length L
G
as a function of drain voltage V
DS
and temperature. Based on our proposed Off-state TDDB compact model, it has been verified that the leakage current is an accurate monitor for TDDB dependence precursor to Hard-breakdown. This paper also discusses the different possible origins of the higher form factor β value for PFET under Off mode stressing due to high impact ionization and non-conducting hot-carrier effects.