Probability distribution of flicker noise in AuNPdecorated graphene–Si Schottky barrier diode

We present results of the probability distribution analysis of flicker noise generated in Au nanoparticle (AuNP) decorated graphene–Si Schottky barrier diodes with and without yellow light illumination (592 nm), close to the localized surface plasmon resonance in the AuNPs (586 nm). The AuNPs occupy imperfections in the single-layer graphene and reduce the flicker noise intensity generated in the graphene layer. The estimated probability distribution exhibited an asymmetry shift when the sample was irradiated by yellow light (a 10-fold increase of the skewness coefficient). This effect is attributed to AuNPs collecting low-frequency fluctuations in the graphene layer and reducing 1/f noise.