Trap Identification in Gate-All-Around Vertically Stacked Si n-channel Nanosheet FETs

In this article low frequency noise (LFN) spectroscopy in n-type Si-channel gate-all-around (GAA) vertically stacked lateral nanosheet (NS) FETs with different numbers of nanosheets, and gate lengths is applied. From the temperature dependence of the observed Lorentzian noise, the presence of divacancies has been identified, that points to etching or implantation damage created during device processing.