Low frequency noise in p-InAsSbP/n-InAs infrared photodiodes and LEDs

We study the low frequency noise in infra-red InAs photodiodes (PDs) in the frequency range 1 – 10
⁴
Hz at room and cryogenic temperatures. We compare noise characteristics of two types of photodiodes: Single Heterostructure PDs and Double Heterostructure PDs and demonstrate the advantages of Double Heterostructure technology. We find that for comparable size, composition, and thickness of the photosensitive layers, the current noise in Double Heterostructure PD is significantly lower than in Single Heterostructure PD at both room and cryogenic temperatures. In addition, we measure the optical output noise in InAsSbP/InAs LEDs at 300K and find that its intensity is less than the intensity of the photodiode reverse bias current noise by ~4 orders of magnitude.