2D Channel Defect States Properties Extraction Using DLTFS in AlGaN/GaN HEMTs

In this work, we extracted the defect state properties of a AlGaN/GaN high mobility electron transistor (GH25) commercialzed by United Monolithic Semiconductors (UMS). We measured the capacitance as a function of the gate voltage. This characterization was correlated with Deep-Level Transient Fourier Spectroscopy (DLTFS) measurements. Two defect states, located in the GaN 2D channel, were observed with energies of about 0.25 eV and 0.44 eV.