Discussion on the Main Mechanisms Contributing to the 1/f Noise in GAA Si VNW pMOSFETs

In this article the 1/f noise origin of gate-all-around vertical nanowire pMOSFETs in the linear regime is investigated. As correlated carrier number and mobility fluctuations seem to prevails, models based on αc - Coulomb scattering coefficient and on Ω - the effective Coulomb scattering coefficient are used. The results show that both models fit well the experimental data but they highlight different flicker noise contribution mechanism for higher applied gate voltages.