Recovery Performance of the Dynamic Threshold Voltage Drift of Silicon Carbide MOSFETs

The threshold voltage instability of silicon carbide (SiC) power metal–oxide–semiconductor field-effect transistors (
mosfet
s) has drawn extensive attention. However, there is limited research on the recovery performance of the threshold voltage of SiC
mosfet
s. In this article, the performance and the physical mechanism of the threshold voltage recovery have been studied with experiments and simulations. It is found that no more than 0.25-V short-term recovery of the threshold voltage can be observed within 1 h after the gate bias. Furthermore, the threshold voltage drift can undergo a more complete long-term recovery even exceeding 75% of the dynamic threshold voltage drift with higher recovery temperature and more negative gate bias. The findings are intended for better understanding and management of potential threshold voltage drift in device tests and applications.