Optical and Electrical Estimation of Multisectorial Hpht Diamond Plates Doped with Boron

Diamond is one of the most promising materials for application in micro- and nanoelectronics as it possesses a unique set of mechanical and electrophysical properties. The modern high pressure high temperature (HPHT) synthesis of single-crystal diamonds makes it possible to get high-quality samples with a desired n- or p- doping level. In this paper, we made a thorough examination of a set of unique multisectorial plates cut from a boron-doped HPHT diamond crystal. Optical and electrical characteristics were examined in various sectors of plates and then compared. The optical absorption plots were used to obtain the relationships between the sample band gap width and doping. The current-voltage and capacitance-voltage characteristics of Schottky diodes were measured in a wide temperature range and free charge carrier concentration distributions were derived.