Predicted Modeling of Hybrid Spintronic-electronic Devices Based on the Verilog-A Compact Model of Magnetic Heterostructure

Applied interest to spintronics devices based on magnetic tunnel junction (MTJ) is motivated mainly by low power consumption and high density. To co-design hybrid spintronic-electronic circuits within the general CMOS design flow, we present behavioral compact model of MTJ in Verilog-A language, compatible with computer-aided design (CAD) systems and scalable to different technological nodes. The compact model simulates the magnetization dynamics as a function of the external field, device anisotropy, magnetostatic field, spin-transfer torque (STT) included shot and Nyquist currents, thermal induced fields. Predictive abilities of model were confirmed experimentally by comparison to the measurements of magnetoresistance and spin-torque ferromagnetic resonance (ST-FMR) on the MTJ sample with a diameter of 100 nm. The model parameters were approximated by data obtained from the magnetoresistance measurements. These estimated parameters were subsequently utilized in a circuit simulator Cadence Spectre for prediction of the ST-FMR outcomes. Results of compact simulation and experiment have qualitative and quantitative agreement.