A 100-MHz High-Efficiency Cross-Coupled Stacked Rectifier in Isolated DC-DC Converter

A 100-MHz high-efficiency cross-coupled stacked rectifier in an isolated power transfer system is presented. The proposed rectifier utilizes stacked MOSFETs and employs cross-coupled structures to reduce conduction loss. To enhance power conversion efficiency, DC voltage biasing is applied to all NMOS and PMOS gate voltages. Moreover, the cross-coupled stacked rectifier enables a swift shutdown when the transmitter side stop oscillating, thereby improving overall system efficiency. The proposed cross-coupled stacked rectifier is fabricated in a 180-nm BCD process using 5-V devices and 1.8-V devices. Measurement results demonstrate that peak PCE reaches to 63.3% at 0.8 W output power in the isolated power transfer system.