Effect of Grooving Angle on Analog Performance of InGaSb Quantum Well p-MOSFET

We investigate the effect of the grooving angle on the analog performance of InGaSb-based quantum well p-MOSFET with raised source/drain architecture having a channel length of 14 nm and thickness of 5 nm with the grooving angle varying from 40° to 90°. Our study reveals that except for transconductance, the device with a narrower groove angle shows considerable improvement in all other analog parameters compared to the one with a broader groove angle.