A Comparative study of MOS characteristics with HfO2, ZrO2 and La2O3 as the gate dielectrics on Si substrates

The current work reports fabrication of MOS devices with high-K dielectrics for post- Moore integrated circuits. Such dielectrics are deposited using RF- sputtering technique. The equivalent oxide thickness of HfO
2
, ZrO
2
and La
2
O
3
are maintained to be 2.4 nm. The capacitance-voltage measurement indicates that the fixed-oxide charge is least for HfO
2
followed by La
2
O
3
and ZrO
2
. The leakage current is also least for HfO
2
and all the devices do not show any breakdown even after a constant voltage stress for 5000 seconds. Further, the shift in flat-band voltage under a constant voltage stress is also least for HfO
2
. Therefore, the current work compares the performance of different high-K dielectrics on Si substrates.