An Approach to Compact Modeling of Organic Field Effect Transistor Using Bias-Dependent Parasitic Resistance

In this paper, a simplified model for bias-dependent parasitic channel resistance has been proposed to include in compact modeling of organic field effect transistor (OFET). Using the developed model, the drain current of the OFET is computed by iteration method and is verified with experimental data taken from literature for validation of the model. Results are shown for the effect of channel dimensions on the drain current and transconductance taking pentacene-based OFET as an example. Results may serve as a guide to the choice of channel dimensions to meet the target performance.