Optically Modulated Organic Photo-sensor + p n n+> at Terahertz Regime

The effects of photo-illumination on Terahertz performance of laterally doped Graphene based Organic Avalanche Transit Time (GL-OATT) oscillator have been investigated for the wide frequency range of 0.3THz to 5THz. A large-signal, self-consistent quantum-corrected drift-diffusion simulator is developed for this purpose. Optically tuned hybrid Graphene based multi-layer organic oscillator (MGL) is found to be more sensitive compared to its singlelayer (SGL) counterpart, in terms of shift in avalanche phase delay, frequency chirping, decrease of negative conductance and total negative resistance of the device. This can be explained in terms of more shift in Avalanche Response Time Delay (ARTD) for multi-layer GL-OATT device. As a consequence of increase in Graphene layers in active region, the ARTD also increases. By comparing experimental observations with simulation data validity of the model is established. To the best of authors’ knowledge, this is the first report on photo-enhanced carrier response of GL-OATT based photo-sensors at THz region.